Of the four new devices, the company picks TW054V65C as its poster child for low turn-on and turn-off losses: 122 ad 58μJ respectively when a pair are used in a 400V 20A half-bridge* – said to be ~55% and 25% less than the company’s previous generation.
This is a 54mΩ (typ) device, rated for use up to 25A at 100°C.
The others are TW031V65C, TW092V65C and TW123V65C, where the first number group indicates typical on-resistance.
Low on-resistance temperature coefficient and low Rds(on) x Qgd figure-of-merit are also claimed by the company, which did not provide the numbers so, delving back into the TW054V65C data sheet, they are 54 to 58mΩ over 25 to 150C (Ed: indeed impressive), and 54mΩ x 6.2nC (typical 25°C figures, total gate charge is 41nC).
To improve driven characteristics, a separate source contact is brought out to pair with the gate.
Recommended gate drive is +18V and 0V, removing the need for a negative voltage rail on the gate driver – gate threshold is between 3 and 5V for 1.6mA through a 10V drain.
Applications are envisaged in switched-mode power supplies, electric vehicle charging stations, uninterruptible power supplies and photovoltaic inverters.
*see fig 6.2.1 in the TW054V65C data sheet for specific conditions
Last month Toshiba introduced a high-speed opto-isolated SiC mosfet driver
