“Specifically designed for motor drive applications, this integrated solution combines two GaN FETs in a half-bridge configuration with drive, control, sensing and autonomous protection,” according to the company.
Called NV6288, it is a 650V part with two 120mΩ GaN HEMTs in an 8 x 10mm PQFN 8×10 package.
Bi-directional ‘loss-less’ current sensing is included to measure both forward current, and recirculating currents between switching coil phases – an autonomous freewheeling function switches on the appropriate GaN transistor when reverse current is detected to reduce conduction losses.
Turn-on and turn-off slew rates are adjustable to trade EMI performance for efficiency.
Protections include high-side short-circuit, low-side short-circuit, over-temperature and 2kV ESD on all pins.
The part is actually listed on the company selection table as a 700V part with an 800V dynamic capability. No other information is available at the time of writing.
Two lower power devices were announced at the same time: the 6 x 8mm 2x 170mΩ NV6257 and the 8 x 10mm 2x 170mΩ NV6287.
Industrial applications are foreseen, as is use in domestic white goods and even hair dryers.
The devices will be on display at PCIM in Nuremberg: Hall 9, stand 544, 6 – 8 May 2025.
Only three weeks ago, Infineon listed motor drives among application when it announced 100V GaN transistors with integrated Schottky diodes.
