They are the WND90P20W and the WND60P20W respectively.
“These devices are engineered to mitigate voltage spikes in electric vehicle charging loads,” according to the company, which went on to emphasise their forward voltage drop and thermal resistance.
Digging into the 90A part data sheet reveals typical forward drop of 1.07V (90A, 25°C Tj, 1.15Vmax), falling to 1V at 150°C.
Junction to mounting base thermal resistance is at most 0.18°C/W, and junction working temperature is -55 to +150°C.
For heatsinking, allowance needs to be made for the internal connection between the device’s mounting tab and cathode.
10ms 25°C single half-sine pulse rating is 1,440A, or 1,584A for 8.3ms.
Maximum reverse current with a 2kV bias is 50μA with the junction at 25°C, and 2mA at 150°C.
Junction capacitance and switching speed are not included in the data sheet.
Use is expected in OR-ing circuits, 1,500V bus systems and 1,000Vdc electric vehicle (off-board) charging infrastructure, “where voltage spikes and stray inductance pose risks to component longevity”, said WeEn.
Solar inverters, energy stores and industrial power systems are other expected uses.
WeEn Semiconductors was formed in 2015 as a joint venture between NXP Semiconductors and Beijing JianGuang Asset Management.
