- 20mΩ 263W GCMX020A120B2T1P
- 40mΩ 160W GCMX040A120B2T1P
- 80mΩ 103W GCMX080A120B2T1P
Power in this list is the maximum allowable when the case is at 25°C and the junctions are at their maximum of 175°C.
Each is tested to over 1,350V with 100% wafer-level burn-in, said the company, which is expecting use in electric vehicle charging, energy storage, and motor drives.
The three half-bridge negative connection are brought out to separate terminals, and each transistor source has its own Kelvin reference for accurate gate driving,
The company has provided some operating figures for a junction temperature of 25°C:
29 – 30A continuous drain current, pulses up to 70A, 0.1 – 0.54mJ turn-on energy, 0.02 – 0.11mJ turn-off energy and 56 – 105ns switching time – the latter combining turn-on delay, rise, turn-off delay and fall.
Web pages:
20mΩ GCMX020A120B2T1P
40mΩ GCMX040A120B2T1P
80mΩ GCMX080A120B2T1P
Last year the company released a series of 1,200V SiC half bridges in 62mm packaging.
