Volume production is scheduled for next year.
With a 2048-bit interface, achieving speeds greater than 2.0 TB/s per memory stack, the device  delivers 60% better performance over the previous generation while having 20% better power efficiency than HBM3E.
Hynix has been sapling HBM4 since early this year and plans to start mass production in H2 2025 on a 3nm process.
Samsung is  developing HBM4 prototypes and plans to produce HBM4 chips on a 4nm process.
Both Hynix and Samsung are working withTSMC which produces base dies for both of them and provides COWOS packaging services..
