“With the EPC2366, and upcoming lower voltage parts, we are expanding the GaN beach-head across low-voltage applications that have long been dominated by silicon,” said EPC CEO Alex Lidow.
Packaged in 3.3 x 2.6mm PQFN, it has a Rds(on).Qg figure-of-merit below 12mΩ·nC, according to its data sheet and, as with other GaN hemts, has zero reverse recovery charge.
Rds(on) is typically 0.8mΩ (5Vg, 30A drain) and typical total gate charge is 13nC (20Vds 5Vg 30Ad), or 12nC (0Vds, 5Vg, 0A).
As GaN hemts have no avalanche mode to protect them, manufacturers build in some over-voltage capability, and are getting better at revealing this in a meaningful way. EPC rates this transistor for an absolute maximum of 10,000 5ms 48V pulses at 150°C.
Max continuous current is 68A, with pulses up to 500A, and expected gate drive is 5V, with limits at -4 and +6V.
Operation is at junction temperatures over -40 to +150°C – the package is designed to be heat-sink from the top (0.6°C/W) and bottom (1.8°C/W).
EPC90167 is a 51 x 51mm 40V 25A half-bridge evaluation board which has two of the devices, alongside an Up1966E gate driver.
Use is also foreseen in 24V battery-powered motor drives – in January, EPC released a 7A 48V dc motor driver evaluation board based on a different GaN transistor.
EPC2366 is not yet generally available, and potential users have to qualify to receive samples.
